high pressure Large volume high-pressure and high-temperature synthesis apparatus I Pressure 10 GPa; Temperature 2000 K
high pressure Large volume high-pressure and high-temperature synthesis apparatus II Pressure 10 GPa; Temperature 2000 K
high pressure Superlarge volume high-pressure and high-temperature synthesis apparatus Pressure 6 GPa; Temperature 3200 K
floating zone IR Image Furnace for Floating-Zone Single Crystal Growth Temperature > 2200 K
ppms PPMS Temperature: 1.8-400 K; Magnetic field: 0-9 T
Laue XRD & Laue diffraction system 2θ: 5-100 deg; 2θ step: 0.005 deg
TG-DTA TG-DTA system Temperature: RT-1800 K
DSC DSC Temperature: 100-1000 K
Seebeck Seebeck measurement system Temperature: RT-1073 K
dielectric Dielectric and ferroelectric measurement instruments
probe Homemade probe for magnetoelectric and electromagnetic effetcs
resistivity High temperature resistivity testing system Temperature: 300-1073 K
ms High vacuum magnetron sputtering deposition system
ms Cold isostatic pressing system Pressure range: 0-300 MPa
muffle Muffle furnace Temperature: RT-1600 K
tube Tube furnace Temperature: RT-1800 K
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Initiated by D. Lu; Updated by Y. Shen