Large volume high-pressure and high-temperature synthesis apparatus I
Pressure 10 GPa; Temperature 2000 K
Large volume high-pressure and high-temperature synthesis apparatus II
Pressure 10 GPa; Temperature 2000 K
Superlarge volume high-pressure and high-temperature synthesis apparatus
Pressure 6 GPa; Temperature 3200 K
IR Image Furnace for Floating-Zone Single Crystal Growth
Temperature > 2200 K
Muffle furnace
Temperature: RT-1600 K
Tube furnace
Temperature: RT-1800 K
TG-DTA system
Temperature: RT-1800 K
DSC
Temperature: 100-1000 K
Seebeck measurement system
Temperature: RT-1073 K
XRD & Laue diffraction system
2θ: 5-100 deg; 2θ step: 0.005 deg
PPMS
Temperature: 1.8-400 K; Magnetic field: 0-9 T
High temperature resistivity testing system
Temperature: 300-1073 K
